PSC Fab II, Powerchip Semiconductor Corp., Hsinchu

Situated on a 6-hectare site next to Fab I, this project consists of two 12-inch wafer Fabs, a headquarters Building, Mechanical and Electrical Service Center and support buildings. The Headquarters Building has a 156meter long façade facing the entrance road that forming the dominating site element.

Design goals were several: integration of new with existing buildings, creation of a landmark quality for the Headquarters Building expressing our client’s enterprising spirit, separation of pedestrian and vehicular traffic, and landscape work to create a pleasant working environment.

The basement contains a conference hall and parking spaces for almost 900 cars. The ground floor holds a dining hall, indoor badminton and basketball courts, entrance lobby, offices, and dressing areas leading to the Fab. An aluminum and glass curtain wall uses PSC’s corporate colors to form the exterior enclosure. The building curves to the left of the lobby in response to the entrance road; to the right, it is mostly glass. This area is illuminated at night, along with the 9th floor gymnasium space, and forms a focal point for the Headquarters Building.

Location: Hsinchu Since-based Industrial Park

Structural system : SS、SRC、RC

Material : Exterior:insulated sandwich panel;aluminum、glass curtain wall

Material : Interior:stone veneer、PVC tiled flooring;epoxy coating; cast stone veneer、painted wall;acoustical ceiling system

Site area : 100,000㎡

Building coverage: 28,780㎡

Total floor area : 187,765㎡

No. of stories: 4 floors below grade、10 floors above grade

Design period : 2000.05 ~ 2001.05

Con. period : 2000.08 ~ 2002.05

類別: Manufacturing

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