TSMC Fab III & IV Project, Taiwan Semiconductor Manufacturing Company (TSMC) Hsinchu
This project design is a joint venture between our office and Anderson Debartolo Pan, Inc. of USA. Located on a site 54,533 sq.m. in area within the Phase II Science Based Industrial Park, the building complex contains a Main Building and a Central Utility Plant. The Main Building consists of a production zone with technical support spaces and an administration zone.
In the production zone are two wafer fabrication facilities known as FAB III and FAB IV, each scheduled for a monthly output of 25,000 to 30,000 8″ wafer. The main process floor (Class 0 – 10 cleanroom), 15,000 sq.m. in area, is on Level 3, with Level 2 serving as the clean Sub-Fab and Level 1 as Utility Sub-Fab. Area between Fab III and Fab IV are for Fab support functions on levels 2, 3 and 4, while level 1 is used for materials warehouse and finished products. Supporting HVAC equipment are positioned within the interstitial spaces of the trussed roof structure, with a pipe bridge connects to the Central Utility Plant. The administration zone has two levels of basement parking and four floors above.
Lobby, exhibition hall and dining room on the first floor, testing laboratories on the second area, dressing rooms and offices on the 3rd and 4th floors. Exterior design incorporates simple forms articulated by vertical stairs and duct shafts, while skylit lightwells between the production and administration zones provide the cleanroom workers with natural light and outside awareness. The Central Utility Plant is two stories high with basement and contains compressed air and DI water production, waste water treatment, etc.. Total floor area of the project is about 137,000 sq.m., construction cost being US$190,000,000 (NT$5,000,000,000). Completion date for Fab III is April 1995, and Fab IV is April 1996.